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| Datasheet | 10ETF12 |
| File Size | 254.25 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | 10ETF12, 10ETF10 |
| Description | DIODE GEN PURP 1.2KV 10A TO220AC, DIODE GEN PURP 1KV 10A TO220AC |
10ETF12 - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.33V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 310ns Current - Reverse Leakage @ Vr 100µA @ 1000V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -40°C ~ 150°C |