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| Datasheet | 19MT050XF |
| File Size | 186.67 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 19MT050XF |
| Description | MOSFET 4N-CH 500V 31A MTP |
19MT050XF - Vishay Semiconductor Diodes Division
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URL Link
www.oemstron.com/datasheet/19MT050XF
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Manufacturer Vishay Semiconductor Diodes Division Series HEXFET® FET Type 4 N-Channel (H-Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 31A Rds On (Max) @ Id, Vgs 220mOhm @ 19A, 10V Vgs(th) (Max) @ Id 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 7210pF @ 25V Power - Max 1140W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case 16-MTP Module Supplier Device Package 16-MTP |