Datasheet | 1N1189R |
File Size | 763.92 KB |
Total Pages | 3 |
Manufacturer | GeneSiC Semiconductor |
Website | |
Total Parts | This datasheet covers 6 part numbers |
Associated Parts | 1N1189R, 1N1189, 1N1190R, 1N1188, 1N1190, 1N1188R |
Description | DIODE GEN PURP REV 600V 35A DO5, DIODE GEN PURP 600V 35A DO5, DIODE GEN PURP REV 600V 35A DO5, DIODE GEN PURP 400V 35A DO5, DIODE GEN PURP 600V 35A DO5 |
1N1189R - GeneSiC Semiconductor
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1N1189R | GeneSiC Semiconductor | DIODE GEN PURP REV 600V 35A DO5 | 289 More on Order |
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1N1189 | GeneSiC Semiconductor | DIODE GEN PURP 600V 35A DO5 | 104 More on Order |
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1N1190R | GeneSiC Semiconductor | DIODE GEN PURP REV 600V 35A DO5 | 463 More on Order |
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1N1188 | GeneSiC Semiconductor | DIODE GEN PURP 400V 35A DO5 | 338 More on Order |
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1N1190 | GeneSiC Semiconductor | DIODE GEN PURP 600V 35A DO5 | 280 More on Order |
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1N1188R | GeneSiC Semiconductor | DIODE GEN PURP REV 400V 35A DO5 | 483 More on Order |
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GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 1.2V @ 35A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-5 Operating Temperature - Junction -65°C ~ 190°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 1.2V @ 35A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-5 Operating Temperature - Junction -65°C ~ 190°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 1.2V @ 35A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-5 Operating Temperature - Junction -65°C ~ 190°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 1.2V @ 35A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-5 Operating Temperature - Junction -65°C ~ 190°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 1.2V @ 35A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-5 Operating Temperature - Junction -65°C ~ 190°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 1.2V @ 35A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-5 Operating Temperature - Junction -65°C ~ 190°C |