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| Datasheet | 1N4150W-G3-08 |
| File Size | 91.7 KB |
| Total Pages | 3 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | 1N4150W-G3-08, 1N4150W-G3-18 |
| Description | DIODE GEN PURP 50V 200MA SOD123, DIODE GEN PURP 50V 200MA SOD123 |
1N4150W-G3-08 - Vishay Semiconductor Diodes Division
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1N4150W-G3-18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 200MA SOD123 | 388 More on Order |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1V @ 200mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 100nA @ 50V Capacitance @ Vr, F 2.5pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case SOD-123 Supplier Device Package SOD-123 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1V @ 200mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 100nA @ 50V Capacitance @ Vr, F 2.5pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case SOD-123 Supplier Device Package SOD-123 Operating Temperature - Junction -55°C ~ 150°C |