Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | 1N484B |
| File Size | 57.76 KB |
| Total Pages | 1 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | 1N484B, 1N482B |
| Description | DIODE GEN PURP 125V 200MA DO35, DIODE GEN PURP 30V 200MA DO35 |
1N484B - Microsemi
The Products You May Be Interested In
URL Link
|
Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 125V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1V @ 100mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 25nA @ 125V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -65°C ~ 200°C |
Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1V @ 100mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 25nA @ 30V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -65°C ~ 200°C |