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| Datasheet | 1N6676 |
| File Size | 46.54 KB |
| Total Pages | 2 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | 1N6676, 1N6675 |
| Description | DIODE SCHOTTKY 30V 200MA DO35, DIODE SCHOTTKY 20V 200MA DO35 |
1N6676 - Microsemi
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Manufacturer Microsemi Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 500mV @ 200mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 30V Capacitance @ Vr, F 50pF @ 0V, 1MHz Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -65°C ~ 125°C |
Manufacturer Microsemi Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 500mV @ 200mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 20V Capacitance @ Vr, F 50pF @ 0V, 1MHz Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -65°C ~ 125°C |