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| Datasheet | 1N8026-GA |
| File Size | 614.38 KB |
| Total Pages | 5 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 1N8026-GA |
| Description | DIODE SILICON 1.2KV 8A TO257 |
1N8026-GA - GeneSiC Semiconductor
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1N8026-GA | GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | 287 More on Order |
URL Link
www.oemstron.com/datasheet/1N8026-GA
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Manufacturer GeneSiC Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 8A (DC) Voltage - Forward (Vf) (Max) @ If 1.6V @ 2.5A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 10µA @ 1200V Capacitance @ Vr, F 237pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-257-3 Supplier Device Package TO-257 Operating Temperature - Junction -55°C ~ 250°C |