Datasheet | 1N914TR |
File Size | 74.59 KB |
Total Pages | 3 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | 1N914TR, 1N914TAP |
Description | DIODE GEN PURP 75V 200MA DO35, DIODE GEN PURP 100V 300MA DO35 |
1N914TR - Vishay Semiconductor Diodes Division
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Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 75V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1V @ 10mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 5µA @ 75V Capacitance @ Vr, F 4pF @ 0V, 1MHz Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -55°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 300mA Voltage - Forward (Vf) (Max) @ If 1V @ 10mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 5µA @ 75V Capacitance @ Vr, F 4pF @ 0V, 1MHz Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -65°C ~ 175°C |