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Datasheet | 20ETF12 |
File Size | 195.9 KB |
Total Pages | 7 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | 20ETF12, 20ETF10, 20ETF08 |
Description | DIODE GEN PURP 1.2KV 20A TO220AC, DIODE GEN PURP 1KV 20A TO220AC, DIODE GEN PURP 800V 20A TO220AC |
20ETF12 - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 1.31V @ 20A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 400ns Current - Reverse Leakage @ Vr 100µA @ 1200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 1.31V @ 20A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 400ns Current - Reverse Leakage @ Vr 100µA @ 1000V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 1.31V @ 20A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 400ns Current - Reverse Leakage @ Vr 100µA @ 800V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -40°C ~ 150°C |