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| Datasheet | 2N7000,126 |
| File Size | 274.62 KB |
| Total Pages | 13 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 2N7000,126 |
| Description | MOSFET N-CH 60V 300MA TO-92 |
2N7000,126 - NXP
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2N7000,126 | NXP | MOSFET N-CH 60V 300MA TO-92 | 112 More on Order |
URL Link
www.oemstron.com/datasheet/2N7000,126
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V FET Feature - Power Dissipation (Max) 830mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |