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| Datasheet | 2N7639-GA |
| File Size | 851.6 KB |
| Total Pages | 8 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 2N7639-GA |
| Description | TRANS SJT 650V 15A TO-257 |
2N7639-GA - GeneSiC Semiconductor
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2N7639-GA | GeneSiC Semiconductor | TRANS SJT 650V 15A TO-257 | 227 More on Order |
URL Link
www.oemstron.com/datasheet/2N7639-GA
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Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 15A (Tc) (155°C) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 105mOhm @ 15A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1534pF @ 35V FET Feature - Power Dissipation (Max) 172W (Tc) Operating Temperature -55°C ~ 225°C (TJ) Mounting Type Through Hole Supplier Device Package TO-257 Package / Case TO-257-3 |