Datasheet | 2SC2383-Y,T6KEHF(M |
File Size | 140.5 KB |
Total Pages | 5 |
Manufacturer | Toshiba Semiconductor and Storage |
Website | http://www.toshiba.com/taec/ |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | 2SC2383-Y,T6KEHF(M, 2SC2383-Y(T6DNS,FM, 2SC2383-O,T6ALPF(M, 2SC2383-O(T6OMI,FM |
Description | TRANS NPN 1A 160V TO226-3, TRANS NPN 1A 160V TO226-3, TRANS NPN 1A 160V TO226-3, TRANS NPN 1A 160V TO226-3 |
2SC2383-Y,T6KEHF(M - Toshiba Semiconductor and Storage
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URL Link
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA, 5V Power - Max 900mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA, 5V Power - Max 900mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA, 5V Power - Max 900mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA, 5V Power - Max 900mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |