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2SC2812N6-CPA-TB-E Datasheet

2SC2812N6-CPA-TB-E Cover
Datasheet2SC2812N6-CPA-TB-E
File Size412.26 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts 2SC2812N6-CPA-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SA1179N6-TB-E
Description TRANS NPN 50V 0.15A CP, TRANS PNP 50V 0.15A CP, TRANS NPN 50V 0.15A CP, TRANS PNP 50V 0.15A CP

2SC2812N6-CPA-TB-E - ON Semiconductor

2SC2812N6-CPA-TB-E Datasheet Page 1
2SC2812N6-CPA-TB-E Datasheet Page 2
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2SC2812N6-CPA-TB-E Datasheet Page 5
2SC2812N6-CPA-TB-E Datasheet Page 6
2SC2812N6-CPA-TB-E Datasheet Page 7

The Products You May Be Interested In

2SC2812N6-CPA-TB-E 2SC2812N6-CPA-TB-E ON Semiconductor TRANS NPN 50V 0.15A CP 232

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2SA1179N6-CPA-TB-E 2SA1179N6-CPA-TB-E ON Semiconductor TRANS PNP 50V 0.15A CP 353

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2SC2812N6-TB-E 2SC2812N6-TB-E ON Semiconductor TRANS NPN 50V 0.15A CP 314

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2SA1179N6-TB-E 2SA1179N6-TB-E ON Semiconductor TRANS PNP 50V 0.15A CP 271

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URL Link

2SC2812N6-CPA-TB-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 1mA, 6V

Power - Max

200mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

3-CP

2SA1179N6-CPA-TB-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 1mA, 6V

Power - Max

200mW

Frequency - Transition

180MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

-

2SC2812N6-TB-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

135 @ 1mA, 6V

Power - Max

200mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

3-CP

2SA1179N6-TB-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

135 @ 1mA, 6V

Power - Max

200mW

Frequency - Transition

180MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

3-CP