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| Datasheet | 2SC3668-Y,T2WNLF(J |
| File Size | 166.74 KB |
| Total Pages | 5 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 5 part numbers |
| Associated Parts | 2SC3668-Y,T2WNLF(J, 2SC3668-Y,T2F(M, 2SC3668-Y,T2F(J, 2SC3668-Y,F2PANF(J, 2SC3668-O,T2CLAF(J |
| Description | TRANS NPN 2A 50V SC71, TRANS NPN 2A 50V SC71, TRANS NPN 2A 50V SC71, TRANS NPN 2A 50V SC71, TRANS NPN 2A 50V SC71 |
2SC3668-Y,T2WNLF(J - Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V Power - Max 1W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case SC-71 Supplier Device Package MSTM |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V Power - Max 1W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case SC-71 Supplier Device Package MSTM |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V Power - Max 1W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case SC-71 Supplier Device Package MSTM |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V Power - Max 1W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case SC-71 Supplier Device Package MSTM |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V Power - Max 1W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case SC-71 Supplier Device Package MSTM |