2SC4793 Datasheet

Datasheet	2SC4793,YHF(M
File Size	125.4 KB
Total Pages	4
Manufacturer	Toshiba Semiconductor and Storage
Website	http://www.toshiba.com/taec/
Total Parts	This datasheet covers 11 part numbers
Associated Parts	2SC4793,YHF(M, 2SC4793,YHF(J, 2SC4793,WNLF(J, 2SC4793,TOA1F(J, 2SC4793,NSEIKIF(J, 2SC4793,HFEF(M, 2SC4793,HFEF(J, 2SC4793,F(J, 2SC4793(PAIO,F,M), 2SC4793(LBSAN,F,M), 2SC4793(F,M)
Description	TRANS NPN 1A 230V TO220-3, TRANS NPN 1A 230V TO220-3, TRANS NPN 1A 230V TO220-3, TRANS NPN 1A 230V TO220-3, TRANS NPN 1A 230V TO220-3

2SC4793,YHF(M - Toshiba Semiconductor and Storage

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URL Link

www.oemstron.com/datasheet/2SC4793,YHF(M

Toshiba Semiconductor and Storage

2SC4793,YHF(M

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

Toshiba Semiconductor and Storage

2SC4793,YHF(J

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

Toshiba Semiconductor and Storage

2SC4793,WNLF(J

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

Toshiba Semiconductor and Storage

2SC4793,TOA1F(J

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

Toshiba Semiconductor and Storage

2SC4793,NSEIKIF(J

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

Toshiba Semiconductor and Storage

2SC4793,HFEF(M

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

Toshiba Semiconductor and Storage

2SC4793,HFEF(J

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

Toshiba Semiconductor and Storage

2SC4793,F(J

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

Toshiba Semiconductor and Storage

2SC4793(PAIO,F,M)

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

Toshiba Semiconductor and Storage

2SC4793(LBSAN,F,M)

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

Toshiba Semiconductor and Storage

2SC4793(F,M)

Manufacturer

Toshiba Semiconductor and Storage

Series

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

230V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS