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2SC536NG-NPA-AT Datasheet

2SC536NG-NPA-AT Cover
Datasheet2SC536NG-NPA-AT
File Size261.54 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts 2SC536NG-NPA-AT, 2SC536NF-NPA-AT, 2SA608NG-NPA-AT, 2SA608NF-NPA-AT
Description TRANS NPN 50V 0.15A NPA, TRANS NPN 50V 0.15A NPA, TRANS PNP 50V 0.15A NPA, TRANS PNP 50V 0.15A NPA

2SC536NG-NPA-AT - ON Semiconductor

2SC536NG-NPA-AT Datasheet Page 1
2SC536NG-NPA-AT Datasheet Page 2
2SC536NG-NPA-AT Datasheet Page 3
2SC536NG-NPA-AT Datasheet Page 4
2SC536NG-NPA-AT Datasheet Page 5
2SC536NG-NPA-AT Datasheet Page 6

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URL Link

2SC536NG-NPA-AT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 10mA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

280 @ 1mA, 6V

Power - Max

500mW

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-226AA

2SC536NF-NPA-AT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 10mA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 1mA, 6V

Power - Max

500mW

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-226AA

2SA608NG-NPA-AT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 10mA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

280 @ 1mA, 6V

Power - Max

500mW

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-226AA

2SA608NF-NPA-AT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 10mA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 1mA, 6V

Power - Max

500mW

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-226AA