
Datasheet | 2SD2257,Q(J |
File Size | 154.39 KB |
Total Pages | 4 |
Manufacturer | Toshiba Semiconductor and Storage |
Website | http://www.toshiba.com/taec/ |
Total Parts | This datasheet covers 6 part numbers |
Associated Parts | 2SD2257,Q(J, 2SD2257,NIKKIQ(J, 2SD2257,KEHINQ(J, 2SD2257(Q,M), 2SD2257(CANO,Q,M), 2SD2257(CANO,A,Q) |
Description | TRANS NPN 3A 100V TO220-3, TRANS NPN 3A 100V TO220-3, TRANS NPN 3A 100V TO220-3, TRANS NPN 3A 100V TO220-3, TRANS NPN 3A 100V TO220-3 |
2SD2257,Q(J - Toshiba Semiconductor and Storage




The Products You May Be Interested In
![]() |
2SD2257,Q(J | Toshiba Semiconductor and Storage | TRANS NPN 3A 100V TO220-3 | 237 More on Order |
![]() |
2SD2257,NIKKIQ(J | Toshiba Semiconductor and Storage | TRANS NPN 3A 100V TO220-3 | 424 More on Order |
![]() |
2SD2257,KEHINQ(J | Toshiba Semiconductor and Storage | TRANS NPN 3A 100V TO220-3 | 174 More on Order |
![]() |
2SD2257(Q,M) | Toshiba Semiconductor and Storage | TRANS NPN 3A 100V TO220-3 | 177 More on Order |
![]() |
2SD2257(CANO,Q,M) | Toshiba Semiconductor and Storage | TRANS NPN 3A 100V TO220-3 | 357 More on Order |
![]() |
2SD2257(CANO,A,Q) | Toshiba Semiconductor and Storage | TRANS NPN 3A 100V TO220-3 | 119 More on Order |
URL Link
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |