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| Datasheet | 2SD2406-Y(F) |
| File Size | 142.94 KB |
| Total Pages | 4 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 2SD2406-Y(F) |
| Description | TRANS NPN 80V 4A TO220NIS |
2SD2406-Y(F) - Toshiba Semiconductor and Storage
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2SD2406-Y(F) | Toshiba Semiconductor and Storage | TRANS NPN 80V 4A TO220NIS | 326 More on Order |
URL Link
www.oemstron.com/datasheet/2SD2406-Y(F)
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A Current - Collector Cutoff (Max) 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 5V Power - Max 25W Frequency - Transition 8MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |