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2SK3707-1E Datasheet

2SK3707-1E Cover
Datasheet2SK3707-1E
File Size255.9 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts 2SK3707-1E, 2SK3707
Description MOSFET N-CH 100V 20A, MOSFET N-CH 100V 20A TO-220ML

2SK3707-1E - ON Semiconductor

2SK3707-1E Datasheet Page 1
2SK3707-1E Datasheet Page 2
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2SK3707-1E Datasheet Page 6
2SK3707-1E Datasheet Page 7

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URL Link

2SK3707-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2150pF @ 20V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 25W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F-3SG

Package / Case

TO-220-3 Full Pack

2SK3707

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2150pF @ 20V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 25W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220ML

Package / Case

TO-220-3 Full Pack