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2SK3813-Z-E1-AZ Datasheet

2SK3813-Z-E1-AZ Cover
Datasheet2SK3813-Z-E1-AZ
File Size243.35 KB
Total Pages10
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts 2SK3813-Z-E1-AZ, 2SK3813(0)-Z-E1-AZ, 2SK3813-AZ
Description TRANSISTOR, TRANSISTOR, MOSFET N-CH 40V MP-3/TO-251

2SK3813-Z-E1-AZ - Renesas Electronics America

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2SK3813-Z-E1-AZ Datasheet Page 10

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2SK3813-Z-E1-AZ 2SK3813-Z-E1-AZ Renesas Electronics America TRANSISTOR 238

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2SK3813(0)-Z-E1-AZ 2SK3813(0)-Z-E1-AZ Renesas Electronics America TRANSISTOR 281

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2SK3813-AZ 2SK3813-AZ Renesas Electronics America MOSFET N-CH 40V MP-3/TO-251 374

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URL Link

2SK3813-Z-E1-AZ

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

2SK3813(0)-Z-E1-AZ

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

2SK3813-AZ

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

96nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5500pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 84W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251 (MP-3)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA