Datasheet | 2SK3821-E |
File Size | 98.22 KB |
Total Pages | 4 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | 2SK3821-E, 2SK3821-DL-E |
Description | MOSFET N-CH 100V 40A SMP, MOSFET N-CH 100V 40A SMP-FD |
2SK3821-E - ON Semiconductor
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2SK3821-E | ON Semiconductor | MOSFET N-CH 100V 40A SMP | 117 More on Order |
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2SK3821-DL-E | ON Semiconductor | MOSFET N-CH 100V 40A SMP-FD | 482 More on Order |
URL Link
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 40A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 33mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V FET Feature - Power Dissipation (Max) 1.65W (Ta), 65W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package SMP Package / Case TO-220-3, Short Tab |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 40A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 33mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V FET Feature - Power Dissipation (Max) 1.65W (Ta), 65W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SMP-FD Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |