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2SK4099LS-1E Datasheet

2SK4099LS-1E Cover
Datasheet2SK4099LS-1E
File Size251.94 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts 2SK4099LS-1E, 2SK4099LS
Description MOSFET N-CH 600V 8.5A, MOSFET N-CH 600V 8.5A TO-220FI

2SK4099LS-1E - ON Semiconductor

2SK4099LS-1E Datasheet Page 1
2SK4099LS-1E Datasheet Page 2
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2SK4099LS-1E Datasheet Page 7

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URL Link

2SK4099LS-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

940mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 35W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F-3FS

Package / Case

TO-220-3 Full Pack

2SK4099LS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

940mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 35W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FI(LS)

Package / Case

TO-220-3 Full Pack