Datasheet | 3LP01M-TL-H |
File Size | 259.85 KB |
Total Pages | 6 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | 3LP01M-TL-H, 3LP01M-TL-E |
Description | MOSFET P-CH 30V 0.1A MCP, MOSFET P-CH 30V 0.1A |
3LP01M-TL-H - ON Semiconductor
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3LP01M-TL-E | ON Semiconductor | MOSFET P-CH 30V 0.1A | 325 More on Order |
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ON Semiconductor Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V Rds On (Max) @ Id, Vgs 10.4Ohm @ 50mA, 4V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 1.43nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 7.5pF @ 10V FET Feature - Power Dissipation (Max) 150mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-MCP Package / Case SC-70, SOT-323 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V Rds On (Max) @ Id, Vgs 10.4Ohm @ 50mA, 4V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 1.43nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 7.5pF @ 10V FET Feature - Power Dissipation (Max) 150mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-MCP Package / Case SC-70, SOT-323 |