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| Datasheet | 4N32(SHORT,F) |
| File Size | 287.74 KB |
| Total Pages | 6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 4N32(SHORT,F) |
| Description | OPTOISO 2.5KV DARL W/BASE 6DIP |
4N32(SHORT,F) - Toshiba Semiconductor and Storage
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4N32(SHORT,F) | Toshiba Semiconductor and Storage | OPTOISO 2.5KV DARL W/BASE 6DIP | 222 More on Order |
URL Link
www.oemstron.com/datasheet/4N32(SHORT,F)
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Manufacturer Toshiba Semiconductor and Storage Series - Number of Channels 1 Voltage - Isolation 2500Vrms Current Transfer Ratio (Min) 500% @ 10mA Current Transfer Ratio (Max) - Turn On / Turn Off Time (Typ) 5µs, 100µs (Max) Rise / Fall Time (Typ) - Input Type DC Output Type Darlington with Base Voltage - Output (Max) 30V Current - Output / Channel 100mA Voltage - Forward (Vf) (Typ) 1.15V Current - DC Forward (If) (Max) 80mA Vce Saturation (Max) 1V Operating Temperature -55°C ~ 100°C Mounting Type Through Hole Package / Case 6-DIP (0.300", 7.62mm) Supplier Device Package 6-DIP |