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Datasheet | A2G35S160-01SR3 |
File Size | 320.2 KB |
Total Pages | 10 |
Manufacturer | NXP |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | A2G35S160-01SR3 |
Description | AIRFAST RF POWER GAN TRANSISTOR |
A2G35S160-01SR3 - NXP
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A2G35S160-01SR3 | NXP | AIRFAST RF POWER GAN TRANSISTOR | 569 More on Order |
URL Link
www.oemstron.com/datasheet/A2G35S160-01SR3
Manufacturer NXP USA Inc. Series - Transistor Type LDMOS Frequency 3.4GHz ~ 3.6GHz Gain 15.7dB Voltage - Test 48V Current Rating (Amps) - Noise Figure - Current - Test 190mA Power - Output 51dBm Voltage - Rated 125V Package / Case NI-400S-2S Supplier Device Package NI-400S-2S |