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| Datasheet | A2G35S200-01SR3 |
| File Size | 339.16 KB |
| Total Pages | 10 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | A2G35S200-01SR3 |
| Description | AIRFAST RF POWER GAN TRANSISTOR |
A2G35S200-01SR3 - NXP
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URL Link
www.oemstron.com/datasheet/A2G35S200-01SR3
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Manufacturer NXP USA Inc. Series - Transistor Type LDMOS Frequency 3.4GHz ~ 3.6GHz Gain 16.1dB Voltage - Test 48V Current Rating (Amps) - Noise Figure - Current - Test 291mA Power - Output 180W Voltage - Rated 125V Package / Case NI-400S-2S Supplier Device Package NI-400S-2S |