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| Datasheet | ALD110808ASCL |
| File Size | 106.21 KB |
| Total Pages | 12 |
| Manufacturer | Advanced Linear Devices Inc. |
| Website | |
| Total Parts | This datasheet covers 8 part numbers |
| Associated Parts | ALD110808ASCL, ALD110908APAL, ALD110908PAL, ALD110808PCL, ALD110808SCL, ALD110908SAL, ALD110808APCL, ALD110908ASAL |
| Description | MOSFET 4N-CH 10.6V 16SOIC, MOSFET 2N-CH 10.6V 8DIP, MOSFET 2N-CH 10.6V 8DIP, MOSFET 4N-CH 10.6V 16DIP, MOSFET 4N-CH 10.6V 16SOIC |
ALD110808ASCL - Advanced Linear Devices Inc.
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Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 4 N-Channel, Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 500Ohm @ 4.8V Vgs(th) (Max) @ Id 810mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SOIC |
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 2 N-Channel (Dual) Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 500Ohm @ 4.8V Vgs(th) (Max) @ Id 810mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 2 N-Channel (Dual) Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 500Ohm @ 4.8V Vgs(th) (Max) @ Id 820mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 4 N-Channel, Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 500Ohm @ 4.8V Vgs(th) (Max) @ Id 820mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 16-DIP (0.300", 7.62mm) Supplier Device Package 16-PDIP |
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 4 N-Channel, Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 500Ohm @ 4.8V Vgs(th) (Max) @ Id 820mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SOIC |
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 2 N-Channel (Dual) Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 500Ohm @ 4.8V Vgs(th) (Max) @ Id 820mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 4 N-Channel, Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 500Ohm @ 4.8V Vgs(th) (Max) @ Id 810mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 16-DIP (0.300", 7.62mm) Supplier Device Package 16-PDIP |
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 2 N-Channel (Dual) Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 500Ohm @ 4.8V Vgs(th) (Max) @ Id 810mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |