Datasheet | ALD1110ESAL |
File Size | 142.27 KB |
Total Pages | 14 |
Manufacturer | Advanced Linear Devices Inc. |
Website | |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | ALD1110ESAL, ALD1110EPAL, ALD1108ESCL, ALD1108EPCL |
Description | MOSFET 2N-CH 10V 8SOIC, MOSFET 2N-CH 10V 8DIP, MOSFET 4N-CH 10V 16SOIC, MOSFET 4N-CH 10V 16DIP |
ALD1110ESAL - Advanced Linear Devices Inc.
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Advanced Linear Devices Inc. Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 2 N-Channel (Dual) Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 500Ohm @ 5V Vgs(th) (Max) @ Id 1.01V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 600mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Advanced Linear Devices Inc. Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 2 N-Channel (Dual) Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 500Ohm @ 5V Vgs(th) (Max) @ Id 1.01V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 600mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
Advanced Linear Devices Inc. Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 4 N-Channel, Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 500Ohm @ 5V Vgs(th) (Max) @ Id 1.01V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 25pF @ 5V Power - Max 600mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SOIC |
Advanced Linear Devices Inc. Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 4 N-Channel, Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 500Ohm @ 5V Vgs(th) (Max) @ Id 1.01V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 25pF @ 5V Power - Max 600mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 16-DIP (0.300", 7.62mm) Supplier Device Package 16-PDIP |