Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | ALD114835PCL |
| File Size | 106.42 KB |
| Total Pages | 12 |
| Manufacturer | Advanced Linear Devices Inc. |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | ALD114835PCL, ALD114935PAL, ALD114935SAL, ALD114835SCL |
| Description | MOSFET 4N-CH 10.6V 16DIP, MOSFET 2N-CH 10.6V 8DIP, MOSFET 2N-CH 10.6V 8SOIC, MOSFET 4N-CH 10.6V 16SOIC |
ALD114835PCL - Advanced Linear Devices Inc.
The Products You May Be Interested In
 |
ALD114835PCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16DIP | 333 More on Order |
 |
ALD114935PAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8DIP | 116 More on Order |
 |
ALD114935SAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | 378 More on Order |
 |
ALD114835SCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16SOIC | 365 More on Order |
URL Link
|
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 4 N-Channel, Matched Pair FET Feature Depletion Mode Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 540Ohm @ 0V Vgs(th) (Max) @ Id 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 16-DIP (0.300", 7.62mm) Supplier Device Package 16-PDIP |
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 2 N-Channel (Dual) Matched Pair FET Feature Depletion Mode Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 540Ohm @ 0V Vgs(th) (Max) @ Id 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 2 N-Channel (Dual) Matched Pair FET Feature Depletion Mode Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 540Ohm @ 0V Vgs(th) (Max) @ Id 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 4 N-Channel, Matched Pair FET Feature Depletion Mode Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 540Ohm @ 0V Vgs(th) (Max) @ Id 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SOIC |