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AOB1100L Datasheet

AOB1100L Cover
DatasheetAOB1100L
File Size292.01 KB
Total Pages6
ManufacturerAlpha & Omega Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts AOB1100L
Description MOSFET N-CH 100V 8A TO263

AOB1100L - Alpha & Omega Semiconductor

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URL Link

AOB1100L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

8A (Ta), 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4833pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 500W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB