Datasheet | AON2707_001 |
File Size | 301.68 KB |
Total Pages | 6 |
Manufacturer | Alpha & Omega Semiconductor |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | AON2707_001, AON2707 |
Description | MOSFET P-CH W/DIO 6DFN, MOSFET P-CH 30V 4A DFN |
AON2707_001 - Alpha & Omega Semiconductor
The Products You May Be Interested In
AON2707_001 | Alpha & Omega Semiconductor | MOSFET P-CH W/DIO 6DFN | 381 More on Order |
|
AON2707 | Alpha & Omega Semiconductor | MOSFET P-CH 30V 4A DFN | 252 More on Order |
URL Link
Alpha & Omega Semiconductor Manufacturer Alpha & Omega Semiconductor Inc. Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package 6-DFN (2x2) Package / Case 6-WDFN Exposed Pad |
Alpha & Omega Semiconductor Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 117mOhm @ 4A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 305pF @ 15V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-DFN-EP (2x2) Package / Case 6-WDFN Exposed Pad |