![AOT8N80L_001 Cover](http://media.oemstron.com/oemstron/datasheet/sm/aot8n80l_001-0001.jpg)
Datasheet | AOT8N80L_001 |
File Size | 367.86 KB |
Total Pages | 6 |
Manufacturer | Alpha & Omega Semiconductor |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | AOT8N80L_001, AOTF8N80, AOT8N80L |
Description | MOSFET N-CH 800V 7.4A TO220, MOSFET N-CH 800V 7.4A TO220F, MOSFET N-CH 800V 7.4A TO220 |
AOT8N80L_001 - Alpha & Omega Semiconductor
![AOT8N80L_001 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/aot8n80l_001-0001.jpg)
![AOT8N80L_001 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/aot8n80l_001-0002.jpg)
![AOT8N80L_001 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/aot8n80l_001-0003.jpg)
![AOT8N80L_001 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/aot8n80l_001-0004.jpg)
![AOT8N80L_001 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/aot8n80l_001-0005.jpg)
![AOT8N80L_001 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/aot8n80l_001-0006.jpg)
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URL Link
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.63Ohm @ 4A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V FET Feature - Power Dissipation (Max) 245W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.63Ohm @ 4A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3F Package / Case TO-220-3 Full Pack |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.63Ohm @ 4A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V FET Feature - Power Dissipation (Max) 245W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |