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Datasheet | AOW20S60 |
File Size | 279.02 KB |
Total Pages | 6 |
Manufacturer | Alpha & Omega Semiconductor |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | AOW20S60 |
Description | MOSFET N-CH 600V 20A TO262 |
AOW20S60 - Alpha & Omega Semiconductor
![AOW20S60 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/aow20s60-0001.jpg)
![AOW20S60 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/aow20s60-0002.jpg)
![AOW20S60 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/aow20s60-0003.jpg)
![AOW20S60 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/aow20s60-0004.jpg)
![AOW20S60 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/aow20s60-0005.jpg)
![AOW20S60 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/aow20s60-0006.jpg)
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AOW20S60 | Alpha & Omega Semiconductor | MOSFET N-CH 600V 20A TO262 | 395 More on Order |
URL Link
www.oemstron.com/datasheet/AOW20S60
Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 199mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1038pF @ 100V FET Feature - Power Dissipation (Max) 266W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |