Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | APT25GR120SSCD10 |
| File Size | 1,088.85 KB |
| Total Pages | 7 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | APT25GR120SSCD10, APT25GR120BSCD10 |
| Description | IGBT 1200V 75A 521W D3PAK, IGBT 1200V 75A 521W TO247 |
APT25GR120SSCD10 - Microsemi
The Products You May Be Interested In
 |
APT25GR120SSCD10 | Microsemi | IGBT 1200V 75A 521W D3PAK | 236 More on Order |
 |
APT25GR120BSCD10 | Microsemi | IGBT 1200V 75A 521W TO247 | 304 More on Order |
URL Link
|
Manufacturer Microsemi Corporation Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 100A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 25A Power - Max 521W Switching Energy 434µJ (on), 466µJ (off) Input Type Standard Gate Charge 203nC Td (on/off) @ 25°C 16ns/122ns Test Condition 600V, 25A, 4.3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package D3Pak |
Manufacturer Microsemi Corporation Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 100A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 25A Power - Max 521W Switching Energy 434µJ (on), 466µJ (off) Input Type Standard Gate Charge 203nC Td (on/off) @ 25°C 16ns/122ns Test Condition 600V, 25A, 4.3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |