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| Datasheet | APTM100H80FT1G |
| File Size | 141.35 KB |
| Total Pages | 5 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | APTM100H80FT1G |
| Description | MOSFET 4N-CH 1000V 11A SP1 |
APTM100H80FT1G - Microsemi
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APTM100H80FT1G | Microsemi | MOSFET 4N-CH 1000V 11A SP1 | 476 More on Order |
URL Link
www.oemstron.com/datasheet/APTM100H80FT1G
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Manufacturer Microsemi Corporation Series - FET Type 4 N-Channel (H-Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 11A Rds On (Max) @ Id, Vgs 960mOhm @ 9A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3876pF @ 25V Power - Max 208W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP1 Supplier Device Package SP1 |