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APTM20UM05SG Datasheet

APTM20UM05SG Cover
DatasheetAPTM20UM05SG
File Size287.32 KB
Total Pages7
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts APTM20UM05SG
Description MOSFET N-CH 200V 317A J3

APTM20UM05SG - Microsemi

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URL Link

APTM20UM05SG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

317A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5mOhm @ 158.5A, 10V

Vgs(th) (Max) @ Id

5V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

448nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

27400pF @ 25V

FET Feature

-

Power Dissipation (Max)

1136W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

Module

Package / Case

J3 Module