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| Datasheet | APTM50AM19STG |
| File Size | 305.16 KB |
| Total Pages | 7 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | APTM50AM19STG |
| Description | MOSFET 2N-CH 500V 170A SP4 |
APTM50AM19STG - Microsemi
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URL Link
www.oemstron.com/datasheet/APTM50AM19STG
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Manufacturer Microsemi Corporation Series - FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 170A Rds On (Max) @ Id, Vgs 19mOhm @ 85A, 10V Vgs(th) (Max) @ Id 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs 492nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 22400pF @ 25V Power - Max 1250W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP4 Supplier Device Package SP4 |