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| Datasheet | AUIRLU3110Z |
| File Size | 714.06 KB |
| Total Pages | 12 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | AUIRLU3110Z |
| Description | MOSFET N-CH 100V 63A IPAK |
AUIRLU3110Z - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/AUIRLU3110Z
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 14mOhm @ 38A, 10V Vgs(th) (Max) @ Id 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |