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| Datasheet | BAS216,115 |
| File Size | 119.13 KB |
| Total Pages | 9 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BAS216,115, BAS216,135 |
| Description | DIODE GEN PURP 75V 250MA SOD2, DIODE GEN PURP 75V 250MA SOD2 |
BAS216,115 - NXP
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BAS216,115 | NXP | DIODE GEN PURP 75V 250MA SOD2 | 205 More on Order |
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BAS216,135 | NXP | DIODE GEN PURP 75V 250MA SOD2 | 159 More on Order |
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Manufacturer NXP USA Inc. Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 75V Current - Average Rectified (Io) 250mA (DC) Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 1µA @ 75V Capacitance @ Vr, F 1.5pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case SOD-110 Supplier Device Package SOD110 Operating Temperature - Junction 150°C (Max) |
Manufacturer NXP USA Inc. Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 75V Current - Average Rectified (Io) 250mA (DC) Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 1µA @ 75V Capacitance @ Vr, F 1.5pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case SOD-110 Supplier Device Package SOD110 Operating Temperature - Junction 150°C (Max) |