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BAW27-TR Datasheet

BAW27-TR Cover
DatasheetBAW27-TR
File Size73.63 KB
Total Pages3
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts BAW27-TR, BAW27-TAP
Description DIODE GEN PURP 60V 600MA DO35, DIODE GEN PURP 60V 600MA DO35

BAW27-TR - Vishay Semiconductor Diodes Division

BAW27-TR Datasheet Page 1
BAW27-TR Datasheet Page 2
BAW27-TR Datasheet Page 3

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URL Link

BAW27-TR

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

600mA (DC)

Voltage - Forward (Vf) (Max) @ If

1.25V @ 400mA

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

6ns

Current - Reverse Leakage @ Vr

100nA @ 60V

Capacitance @ Vr, F

4pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

DO-204AH, DO-35, Axial

Supplier Device Package

DO-35

Operating Temperature - Junction

175°C (Max)

BAW27-TAP

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

600mA (DC)

Voltage - Forward (Vf) (Max) @ If

1.25V @ 400mA

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

6ns

Current - Reverse Leakage @ Vr

100nA @ 60V

Capacitance @ Vr, F

4pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

DO-204AH, DO-35, Axial

Supplier Device Package

DO-35

Operating Temperature - Junction

175°C (Max)