Datasheet | BCP5616E6327HTSA1 |
File Size | 821.95 KB |
Total Pages | 7 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 10 part numbers |
Associated Parts | BCP5616E6327HTSA1, BCP 55-16 E6327, BCP5416E6433HTMA1, BCP 54-16 H6779, BCP 54-16 H6778, BCP 54-16 E6327, BCP 56-10 E6433, BCP5610E6327HTSA1, BCP55E6327HTSA1, BCP54E6327HTSA1 |
Description | TRANS NPN 80V 1A SOT-223, TRANS NPN 60V 1A SOT-223, TRANS NPN 45V 1A SOT-223, TRANS NPN 45V 1A SOT223, TRANS NPN 45V 1A SOT223 |
BCP5616E6327HTSA1 - Infineon Technologies
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URL Link
Infineon Technologies Manufacturer Infineon Technologies Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package PG-SOT223-4 |
Infineon Technologies Manufacturer Infineon Technologies Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package PG-SOT223-4 |
Infineon Technologies Manufacturer Infineon Technologies Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package PG-SOT223-4 |
Infineon Technologies Manufacturer Infineon Technologies Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package PG-SOT223-4 |
Infineon Technologies Manufacturer Infineon Technologies Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package PG-SOT223-4 |
Infineon Technologies Manufacturer Infineon Technologies Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package PG-SOT223-4 |
Infineon Technologies Manufacturer Infineon Technologies Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package PG-SOT223-4 |
Infineon Technologies Manufacturer Infineon Technologies Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package PG-SOT223-4 |
Infineon Technologies Manufacturer Infineon Technologies Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package PG-SOT223-4 |
Infineon Technologies Manufacturer Infineon Technologies Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V Power - Max 2W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package PG-SOT223-4 |