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BCR 112T E6327 Datasheet

BCR 112T E6327 Cover
DatasheetBCR 112T E6327
File Size206.84 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts BCR 112T E6327, BCR 112L3 E6327
Description TRANS PREBIAS NPN 250MW SC75, TRANS PREBIAS NPN 250MW TSLP-3

BCR 112T E6327 - Infineon Technologies

BCR 112T E6327 Datasheet Page 1
BCR 112T E6327 Datasheet Page 2
BCR 112T E6327 Datasheet Page 3
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BCR 112T E6327 Datasheet Page 7
BCR 112T E6327 Datasheet Page 8
BCR 112T E6327 Datasheet Page 9

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BCR 112L3 E6327 BCR 112L3 E6327 Infineon Technologies TRANS PREBIAS NPN 250MW TSLP-3 183

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URL Link

BCR 112T E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

140MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Supplier Device Package

PG-SC-75

BCR 112L3 E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

140MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

PG-TSLP-3-4