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BCR 114T E6327 Datasheet

BCR 114T E6327 Cover
DatasheetBCR 114T E6327
File Size327.53 KB
Total Pages12
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts BCR 114T E6327, BCR 114L3 E6327, BCR 114F E6327
Description TRANS PREBIAS NPN 250MW SC75, TRANS PREBIAS NPN 250MW TSLP-3, TRANS PREBIAS NPN 250MW TSFP-3

BCR 114T E6327 - Infineon Technologies

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BCR 114T E6327 BCR 114T E6327 Infineon Technologies TRANS PREBIAS NPN 250MW SC75 129

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BCR 114L3 E6327 BCR 114L3 E6327 Infineon Technologies TRANS PREBIAS NPN 250MW TSLP-3 235

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BCR 114F E6327 BCR 114F E6327 Infineon Technologies TRANS PREBIAS NPN 250MW TSFP-3 255

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URL Link

BCR 114T E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

160MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Supplier Device Package

PG-SC-75

BCR 114L3 E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

160MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

PG-TSLP-3-4

BCR 114F E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

160MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

PG-TSFP-3