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BCR 162F E6327 Datasheet

BCR 162F E6327 Cover
DatasheetBCR 162F E6327
File Size811.21 KB
Total Pages6
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts BCR 162F E6327, BCR 162 B6327, BCR162E6327HTSA1
Description TRANS PREBIAS PNP 250MW TSFP-3, TRANS PREBIAS PNP 200MW SOT23-3, TRANS PREBIAS PNP 200MW SOT23-3

BCR 162F E6327 - Infineon Technologies

BCR 162F E6327 Datasheet Page 1
BCR 162F E6327 Datasheet Page 2
BCR 162F E6327 Datasheet Page 3
BCR 162F E6327 Datasheet Page 4
BCR 162F E6327 Datasheet Page 5
BCR 162F E6327 Datasheet Page 6

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BCR 162 B6327 BCR 162 B6327 Infineon Technologies TRANS PREBIAS PNP 200MW SOT23-3 263

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BCR162E6327HTSA1 BCR162E6327HTSA1 Infineon Technologies TRANS PREBIAS PNP 200MW SOT23-3 266

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URL Link

BCR 162F E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

PG-TSFP-3

BCR 162 B6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

BCR162E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3