Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BCR129SE6327HTSA1 |
| File Size | 866.73 KB |
| Total Pages | 11 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 6 part numbers |
| Associated Parts | BCR129SE6327HTSA1, BCR129SH6327XTSA1, BCR129WE6327HTSA1, BCR 129F E6327, BCR129WH6327XTSA1, BCR129E6327HTSA1 |
| Description | TRANS 2NPN PREBIAS 0.25W SOT363, TRANS 2NPN PREBIAS 0.25W SOT363, TRANS PREBIAS NPN 250MW SOT323-3, TRANS PREBIAS NPN 250MW TSFP-3, TRANS PREBIAS NPN 250MW SOT323-3 |
BCR129SE6327HTSA1 - Infineon Technologies
The Products You May Be Interested In
 |
BCR129SE6327HTSA1 | Infineon Technologies | TRANS 2NPN PREBIAS 0.25W SOT363 | 111 More on Order |
 |
BCR129SH6327XTSA1 | Infineon Technologies | TRANS 2NPN PREBIAS 0.25W SOT363 | 365 More on Order |
 |
BCR129WE6327HTSA1 | Infineon Technologies | TRANS PREBIAS NPN 250MW SOT323-3 | 300 More on Order |
 |
BCR 129F E6327 | Infineon Technologies | TRANS PREBIAS NPN 250MW TSFP-3 | 399 More on Order |
 |
BCR129WH6327XTSA1 | Infineon Technologies | TRANS PREBIAS NPN 250MW SOT323-3 | 339 More on Order |
 |
BCR129E6327HTSA1 | Infineon Technologies | TRANS PREBIAS NPN 200MW SOT23-3 | 446 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series - Transistor Type 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) - Frequency - Transition 150MHz Power - Max 250mW Mounting Type Surface Mount Package / Case 6-VSSOP, SC-88, SOT-363 Supplier Device Package PG-SOT363-6 |
Manufacturer Infineon Technologies Series - Transistor Type 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) - Frequency - Transition 150MHz Power - Max 250mW Mounting Type Surface Mount Package / Case 6-VSSOP, SC-88, SOT-363 Supplier Device Package PG-SOT363-6 |
Manufacturer Infineon Technologies Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 150MHz Power - Max 250mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
Manufacturer Infineon Technologies Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 150MHz Power - Max 250mW Mounting Type Surface Mount Package / Case SOT-723 Supplier Device Package PG-TSFP-3 |
Manufacturer Infineon Technologies Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 150MHz Power - Max 250mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
Manufacturer Infineon Technologies Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 150MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |