Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BCR166WE6327HTSA1 |
| File Size | 836.35 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 6 part numbers |
| Associated Parts | BCR166WE6327HTSA1, BCR 166F E6327, BCR166B6327HTLA1, BCR166WH6327XTSA1, BCR166E6327HTSA1, BCR166E6433HTMA1 |
| Description | TRANS PREBIAS PNP 250MW SOT323-3, TRANS PREBIAS PNP 250MW TSFP-3, TRANS PREBIAS PNP 200MW SOT23-3, TRANS PREBIAS PNP 250MW SOT323-3, TRANS PREBIAS PNP 0.2W SOT23-3 |
BCR166WE6327HTSA1 - Infineon Technologies
The Products You May Be Interested In
 |
BCR166WE6327HTSA1 | Infineon Technologies | TRANS PREBIAS PNP 250MW SOT323-3 | 177 More on Order |
 |
BCR 166F E6327 | Infineon Technologies | TRANS PREBIAS PNP 250MW TSFP-3 | 328 More on Order |
 |
BCR166B6327HTLA1 | Infineon Technologies | TRANS PREBIAS PNP 200MW SOT23-3 | 126 More on Order |
 |
BCR166WH6327XTSA1 | Infineon Technologies | TRANS PREBIAS PNP 250MW SOT323-3 | 496 More on Order |
|
BCR166E6327HTSA1 | Infineon Technologies | TRANS PREBIAS PNP 0.2W SOT23-3 | 278 More on Order |
|
BCR166E6433HTMA1 | Infineon Technologies | TRANS PREBIAS PNP 200MW SOT23-3 | 439 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 160MHz Power - Max 250mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 160MHz Power - Max 250mW Mounting Type Surface Mount Package / Case SOT-723 Supplier Device Package PG-TSFP-3 |
Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 160MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 160MHz Power - Max 250mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 160MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 160MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |