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| Datasheet | BCR562E6327HTSA1 |
| File Size | 526.06 KB |
| Total Pages | 6 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BCR562E6327HTSA1 |
| Description | TRANS PREBIAS PNP 0.33W SOT23-3 |
BCR562E6327HTSA1 - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/BCR562E6327HTSA1
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Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 150MHz Power - Max 330mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |