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| Datasheet | BF959ZL1G |
| File Size | 53.13 KB |
| Total Pages | 4 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 6 part numbers |
| Associated Parts | BF959ZL1G, BF959ZL1, BF959RL1G, BF959RL1, BF959G, BF959 |
| Description | RF TRANS NPN 20V 700MHZ TO92-3, RF TRANS NPN 20V 700MHZ TO92-3, RF TRANS NPN 20V 700MHZ TO92-3, RF TRANS NPN 20V 700MHZ TO92-3, RF TRANS NPN 20V 700MHZ TO92-3 |
BF959ZL1G - ON Semiconductor
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 625mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 625mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 625mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 625mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 625mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 625mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |