Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BSC022N03S |
| File Size | 309.28 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BSC022N03S, BSC022N03SG |
| Description | MOSFET N-CH 30V 50A TDSON-8, MOSFET N-CH 30V 100A TDSON-8 |
BSC022N03S - Infineon Technologies
The Products You May Be Interested In
 |
BSC022N03S | Infineon Technologies | MOSFET N-CH 30V 50A TDSON-8 | 409 More on Order |
 |
BSC022N03SG | Infineon Technologies | MOSFET N-CH 30V 100A TDSON-8 | 402 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs 58nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7490pF @ 15V FET Feature - Power Dissipation (Max) 2.8W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1 Package / Case 8-PowerTDFN |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 110µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8290pF @ 15V FET Feature - Power Dissipation (Max) 2.8W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1 Package / Case 8-PowerTDFN |