Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

BSD314SPEL6327HTSA1 Datasheet

BSD314SPEL6327HTSA1 Cover
DatasheetBSD314SPEL6327HTSA1
File Size414.67 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSD314SPEL6327HTSA1
Description MOSFET P-CH 30V 1.5A SOT363

BSD314SPEL6327HTSA1 - Infineon Technologies

BSD314SPEL6327HTSA1 Datasheet Page 1
BSD314SPEL6327HTSA1 Datasheet Page 2
BSD314SPEL6327HTSA1 Datasheet Page 3
BSD314SPEL6327HTSA1 Datasheet Page 4
BSD314SPEL6327HTSA1 Datasheet Page 5
BSD314SPEL6327HTSA1 Datasheet Page 6
BSD314SPEL6327HTSA1 Datasheet Page 7
BSD314SPEL6327HTSA1 Datasheet Page 8
BSD314SPEL6327HTSA1 Datasheet Page 9

The Products You May Be Interested In

BSD314SPEL6327HTSA1 BSD314SPEL6327HTSA1 Infineon Technologies MOSFET P-CH 30V 1.5A SOT363 149

More on Order

URL Link

BSD314SPEL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

140mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

2V @ 6.3µA

Gate Charge (Qg) (Max) @ Vgs

2.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

294pF @ 15V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT363-6

Package / Case

6-VSSOP, SC-88, SOT-363